Semiconductor device with through-substrate via covered by a solder ball and related method of production

摘要

The semiconductor device comprises a semiconductor substrate (10) with a metallization (111) having an upper terminal layer (22) located at a front side (20) of the substrate. The metallization forms a through-substrate via (23) from the upper terminal layer to a rear terminal layer (13) located opposite to the front side at a rear side (21) of the substrate. The through-substrate via comprises a void (101), which may be filled with air or another gas. A solder ball (100) closes the void without completely filling it. A variety of interconnections for three dimensional integration is offered by this scheme.

主权项

1. A semiconductor device comprising:
a semiconductor substrate (10) with a front side (20) and an opposite rear side (21), an upper terminal layer (22) at the front side (20), a rear terminal layer (13) at the rear side (21), a through-substrate via (23) comprising a metallization (111) and a void (101), the metallization (111) electrically connecting the rear terminal layer (13) with the upper terminal layer (22), a solder ball (100), which is arranged above the front side (20) and covers the void (101) without completely filling it, and a wiring (24) at the front side (20),characterized in that
the upper terminal layer (22) is electrically connected to the wiring (24) and insulated from the solder ball (100).