Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device manufactured thereby

摘要

The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above the body for closing the open end or mouth of the trench. The trench is formed by selectively etching the body, wherein the reaction by-products deposit on the walls of the trench and form a passivation layer along the walls of the trench and a restriction element in proximity of the mouth of the trench.

主权项

1. A process for manufacturing a microelectronic semiconductor device, the process comprising:
selectively etching a body to form a trench having side walls and an open end, the selectively etching forming reaction by-products; causing the reaction by-products to deposit on the side walls of the trench to form a restriction element in proximity of the open end of the trench; and forming a metal layer above the body, the metal layer closing the open end of the trench without penetrating into the trench.