| 发明名称 | Semiconductor device having buried layer | ||
| 摘要 | A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source region disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the source region along a first direction, and a buried layer having the second conductivity type and disposed under an area between the source region and the drain region. | ||
| 申请公布号 | US9553142(B2) | 申请公布日期 | 2017.01.24 |
| 申请号 | US201514737874 | 申请日期 | 2015.06.12 |
| 申请人 | Macronix International Co., Ltd. | 发明人 | Chang Yu-Jui;Lin Cheng-Chi |
| 分类号 | H01L29/66;H01L29/06;H01L29/78;H01L29/10 | 主分类号 | H01L29/66 |
| 代理机构 | Finnegan, Henderson, Farabow, Garrett & Dunner LLP | 代理人 | Finnegan, Henderson, Farabow, Garrett & Dunner LLP |
| 主权项 | 1. A semiconductor device, comprising: a substrate having a first conductivity type; a high-voltage well having a second conductivity type and disposed in the substrate; a source region disposed in the high-voltage well; a drain region disposed in the high-voltage well and spaced apart from the source region along a first direction; and a plurality of discrete buried regions having the second conductivity type and disposed under an area between the source region and the drain region, wherein the plurality of discrete buried regions are spaced apart from each other along a second direction orthogonal to the first direction. | ||
| 地址 | Hsinchu TW | ||