发明名称 |
Method of controlling an ion implanter in plasma immersion mode |
摘要 |
The present invention relates to a method of controlling an ion implanter having a plasma power supply AP and a substrate power supply, the substrate power supply comprising:
an electricity generator;a first switch SW1 connected between the generator and the output terminal of the substrate power supply; anda second switch SW2 connected between the output terminal and a neutralization terminal;the method including an implantation stage A-D and a neutralization stage E-H. The method also includes a relaxation stage C-F overlapping the implantation stage and the neutralization stage, during which relaxation stage the plasma power supply is inactivated. Furthermore, the neutralization stage includes a preliminary step E-F for closing the second switch, this preliminary step being followed by a cancellation step F-G for activating the plasma power supply AP. |
申请公布号 |
US9552962(B2) |
申请公布日期 |
2017.01.24 |
申请号 |
US201214349501 |
申请日期 |
2012.10.04 |
申请人 |
ION BEAM SERVICES |
发明人 |
Torregrosa Frank;Roux Laurent |
分类号 |
H01J37/32;H01J37/317;C23C14/48;H01L21/223 |
主分类号 |
H01J37/32 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A method of controlling an ion implanter having a plasma power supply and a substrate power supply, the substrate power supply comprising:
an electricity generator having its positive pole connected to ground; a first switch having its first pole connected to the negative pole of said generator and having its second pole connected to the output terminal of said substrate power supply; and a second switch having its first pole connected to said output terminal and having its second pole connected to a neutralization terminal;the method including an implantation stage during which:
said plasma power supply is activated; said first switch is closed; and said second switch is opened;the method also including a neutralization stage during which:
said first switch is opened; and said second switch is closed;the method being characterized in that:
it also includes a relaxation stage that overlaps said implantation stage and said neutralization stage, in which relaxation stage said plasma power supply is inactivated; and said neutralization stage includes a preliminary step for closing said second switch, said preliminary step being followed by a cancellation step for activating said plasma power supply. |
地址 |
Peynier FR |