发明名称 Light emitting device including semiconductor nanocrystals
摘要 A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.
申请公布号 US9550614(B2) 申请公布日期 2017.01.24
申请号 US201213486478 申请日期 2012.06.01
申请人 MASSACHUSETTS INSTITUTE OF TECHNOLOGY 发明人 Bawendi Moungi G.;Bulovic Vladimir;Coe-Sullivan Seth;Caruge Jean-Michel;Steckel Jonathan;Halpert Jonathan E.;Arango Alexi
分类号 H01L33/02;B65D71/36;H01L51/50;B65D81/26 主分类号 H01L33/02
代理机构 Steptoe & Johnson LLP 代理人 Steptoe & Johnson LLP
主权项 1. A light emitting device comprising: a first charge transporting layer including a first inorganic material in contact with a first electrode arranged to introduce charge in the first charge transporting layer, wherein the first inorganic material is amorphous or polycrystalline; a second electrode; a layer including an emissive material comprising a plurality of semiconductor nanocrystals disposed between the first electrode and the second electrode, and a doped layer proximal to the nanocrystals, wherein the doped layer includes a dopant comprising an oxygen deficiency, a halogen dopant, a mixed metal, a p-type dopant, or an n-type dopant in an amount effective to minimize non-radiative losses; wherein the band gap of the first inorganic material is greater than the emission energy of the semiconductor nanocrystals.
地址 Cambridge MA US