发明名称 |
Light emitting device including semiconductor nanocrystals |
摘要 |
A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor. |
申请公布号 |
US9550614(B2) |
申请公布日期 |
2017.01.24 |
申请号 |
US201213486478 |
申请日期 |
2012.06.01 |
申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
Bawendi Moungi G.;Bulovic Vladimir;Coe-Sullivan Seth;Caruge Jean-Michel;Steckel Jonathan;Halpert Jonathan E.;Arango Alexi |
分类号 |
H01L33/02;B65D71/36;H01L51/50;B65D81/26 |
主分类号 |
H01L33/02 |
代理机构 |
Steptoe & Johnson LLP |
代理人 |
Steptoe & Johnson LLP |
主权项 |
1. A light emitting device comprising:
a first charge transporting layer including a first inorganic material in contact with a first electrode arranged to introduce charge in the first charge transporting layer, wherein the first inorganic material is amorphous or polycrystalline; a second electrode; a layer including an emissive material comprising a plurality of semiconductor nanocrystals disposed between the first electrode and the second electrode, and a doped layer proximal to the nanocrystals, wherein the doped layer includes a dopant comprising an oxygen deficiency, a halogen dopant, a mixed metal, a p-type dopant, or an n-type dopant in an amount effective to minimize non-radiative losses; wherein the band gap of the first inorganic material is greater than the emission energy of the semiconductor nanocrystals. |
地址 |
Cambridge MA US |