Offset compensation for ferroelectric memory cell sensing

摘要

Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Offsets in the threshold voltage of switching components (e.g., transistors) connected to digit lines may be compensated by using various operating techniques or additional circuit components, or both. For example, a switching component connected to a digit line may also be connected to an offset capacitor selected to compensate for a threshold voltage offset. The offset capacitor may be discharged in conjunction with a read operation, resulting in a threshold voltage applied to the switching component. This may enable all or substantially all of the stored charge of the ferroelectric memory cell to be extracted and transferred to a sense capacitor through the transistor. A sense amplifier may compare the voltage of the sense capacitor to a reference voltage in order to determine the stored logic state of the memory cell.

主权项

1. A method of operating a ferroelectric memory cell, comprising:
virtually grounding a digit line that is in electronic communication with the ferroelectric memory cell; discharging a first offset capacitor that is in electronic communication with a first switching component; and transferring a stored charge of the ferroelectric memory cell to a sense capacitor through the first switching component, wherein the stored charge is transferred while the digit line is virtually grounded and after the first offset capacitor has discharged.