Semiconductor photodetector element and method

摘要

A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer.

主权项

1. A semiconductor photodetector element comprising:
a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; a semiconductor layer formed so as to surround the light absorption layer; a carrier multiplication layer formed between the light absorption layer and the semiconductor layer; a graded layer and a field drop layer formed between the light absorption layer and the carrier multiplication layer, a first electrode configured to electrically connected to the semiconductor substrate; a second electrode configured to electrically connected to the semiconductor layer; and an insulating layer formed on upper surfaces of the columnar structure, the light absorption layer, the graded layer, the field drop layer, the carrier multiplication layer, and the semiconductor layer, wherein the second electrode extends on the insulating layer and along a side surface of the semiconductor layer, and wherein a surface of the second electrode is in contact with the insulating layer and serves as a mirror.