Method of making a wire-based semiconductor device

摘要

In some embodiments, a method for manufacturing forms a semiconductor device, such as a transistor. A dielectric stack is formed on a semiconductor substrate. The stack comprises a plurality of dielectric layers separated by one of a plurality of spacer layers. Each of the plurality of spacer layers is formed of a different material than immediately neighboring layers of the plurality of dielectric layers. A vertically-extending hole is formed through the plurality of dielectric layers and the plurality of spacer layers. The hole is filled by performing an epitaxial deposition, with the material filling the hole forming a wire. The wire is doped and three of the dielectric layers are sequentially removed and replaced with conductive material, thereby forming upper and lower contacts to the wire and a gate between the upper and lower contacts. The wire may function as a channel region for a transistor.

主权项

1. A method for manufacturing an electronic device, comprising:
forming a transistor, wherein forming the transistor comprises:
forming a stack of layers over a semiconductor substrate, the stack comprising:
a first dielectric layer;a first spacer layer over the first dielectric layer;a second dielectric layer of the first spacer layer;a second spacer layer over the second dielectric layer; anda third dielectric layer over the second spacer layer;etching a vertically-extending hole completely through the stack;filling the hole with a semiconductor;selectively removing at least a portion of the first dielectric layer to form a first buried volume extending directly below the first spacer layer;filling the first buried volume with a conductor;selectively removing at least a portion of the second dielectric layer to form a second buried volume extending directly below the second spacer layer; andfilling the second buried volume with a conductor.