Semiconductor structure and the manufacturing method thereof

摘要

The present disclosure provides a FinFET. The FinFET includes a silicon-on-insulator (SOI) with an insulator; a plurality of fin structures on the insulator; an isolation on the insulator, and between two adjacent fin structures in the plurality of fin structures; and an oxide layer between each of the plurality of fin structures and the insulator, wherein the insulator comprises silicon germanium oxide. A method for manufacturing the FinFET includes forming a plurality of fin structures on a layer having a larger lattice constant than that of the fin structure by a patterning operation; oxidizing the fin structure and the layer to transform the layer into a first oxide layer; filling insulating material between adjacent fin structures; and etching the insulating material to expose a top surface and at least a portion of a sidewall of the fin structure.

主权项

1. A transistor, comprising:
a substrate; a continuous first oxide layer on the substrate; a plurality of stripes overlaid on the continuous first oxide layer; a gate on a sidewall and a top surface of one of the plurality of stripes; a second oxide layer between each of the plurality of stripes and the continuous first oxide layer, the second oxide layer having a top surface and a bottom surface, the top surface being in contact with a bottom of each of the plurality of stripes and the bottom surface being in contact with a top surface of the continuous first oxide under each of the plurality of stripes; and an isolation disposed on the continuous first oxide layer, contacting a portion of the sidewall of one of the plurality of stripes, wherein the first oxide layer and the second oxide layer are composed of different materials.