Apparatuses and methods for sensing using an integration component

摘要

The present disclosure includes apparatuses and methods for sensing a resistance variable memory cell. A number of embodiments include circuitry to provide a programming signal to a memory cell in the array, the programming signal associated with programming the memory cell to a particular data state; and determine, via an integration component, if a data state of the memory cell changes to a different data state responsive to the programming signal being provided.

主权项

1. A method, comprising:
providing a programming signal to a memory cell, wherein the programming signal is associated with programming the memory cell to a particular data state; providing a signal from a comparison component to an integration component, wherein the signal is associated with a resistance of a memory cell in response to the programming signal being applied to the memory cell; and determining if a data state of the memory cell changes to a different data state responsive to the programming signal being provided to the memory cell based on an amount of time that the signal from a comparison component causes a select device to be turned on.