发明名称 |
Crystalline form of (R)-7-chloro-N-(quinuclidin-3-yl)benzo[b]thiophene-2-carboxamide hydrochloride monohydrate |
摘要 |
Crystalline Forms I and II of (R)-7-chloro-N-(quinuclidin-3-yl)benzo[b]thiophene-2-carboxamide hydrochloride monohydrate and compositions, methods of manufacture and therapeutic uses thereof are described. |
申请公布号 |
US9550767(B2) |
申请公布日期 |
2017.01.24 |
申请号 |
US201615002163 |
申请日期 |
2016.01.20 |
申请人 |
Forum Pharmaceuticals, Inc. |
发明人 |
Oliver-Shaffer Patricia;Shapiro Gideon;Chesworth Richard;Kishida Muneki;Ishige Takayuki |
分类号 |
C07D453/02;A61K9/48;A61K31/439;C30B29/54 |
主分类号 |
C07D453/02 |
代理机构 |
Jones Day |
代理人 |
Jones Day |
主权项 |
1. A method for preparing crystalline Form I of crystalline Form I of (R)-7-chloro-N-(quinuclidin-3-yl)benzo[b]thiophene-2-carboxamide hydrochloride monohydrate, the method comprising:
a) heating 10-30% by weight of (R)-7-chloro-N-(quinuclidin-3-yl)benzo[b]thiophene-2-carboxamide hydrochloride in acetonitrile or an aqueous acetonitrile to between 60° C. and the boiling point of the solution; b) optionally adding water to the mixture to fully dissolve the (R)-7-chloro-N(quinuclidin-3-yl)benzo[b]thiophene-2-carboxamide hydrochloride; c) cooling the solution until crystals are just visible; d) if the water content is greater than 3% volume/volume when crystals are just visible, adding acetonitrile to the mixture so that the water content is less than 3% volume/volume; e) cooling the resulting mixture to below 15° C.; and f) isolating crystalline (R)-7-chloro-N-(quinuclidin-3-yl)benzo[b]thiophene-2-carboxamide hydrochloride monohydrate;wherein the crystalline Form I of crystalline Form I of (R)-7-chloro-N-(quinuclidin-3-yl)benzo[b]thiophene-2-carboxamide hydrochloride monohydrate is characterized by an x-ray powder diffraction pattern having peaks expressed as 2Θ at:
i) one or both of 17.48 and 20.58 ±0.20 degrees when measured against an internal silicon standard; and ii) at least four peaks selected from a group of peaks consisting of: 4.50, 9.04, 14.60, 15.14, 15.80, 16.60, 18.16, 18.44, 19.48, 21.74 and 25.46±0.20 degrees when measured against an internal silicon standard. |
地址 |
Waltham MA US |