Trench formation with CD less than 10nm for replacement fin growth

摘要

Embodiments described herein generally relate to methods of forming sub-10 nm node FinFETs. Various processing steps may be performed on a substrate to provide a trench over which a dielectric layer is conformally deposited. The dielectric layer is subsequently etched within the trench to expose the underlying substrate and a semiconductive material is deposited in the trench to form a fin structure. The processes of forming the trench, depositing the dielectric layer, and forming the fin structure can achieve sub-10 nm node dimensions and provide increasingly smaller FinFETs.

主权项

1. A method of forming a semiconducting fin structure, comprising:
etching a first layer to form a feature bounded by a first material; depositing a second layer over the first material and the feature formed in the first layer; etching the second layer to expose a portion of the first layer within the feature through the second layer; and forming a III-V material on the exposed portion of the first layer, the III-V material filling the feature between the second layer.