Semiconductor device

摘要

A semiconductor device may include gate structures spaced apart above a top surface of a substrate. The gate structures may include a horizontal electrode extending in a first direction parallel with the top surface of a substrate. An isolation insulating layer may be disposed between the gate structures. A plurality of cell pillars may penetrate the horizontal electrode and connect to the substrate. The plurality of cell pillars may include a minimum spacing defined by a shortest distance between any two of the plurality of cell pillars. The thickness of the horizontal electrode may be greater than the minimum spacing of the cell pillars.

主权项

1. A semiconductor device comprising:
a plurality of gate structures spaced apart above a top surface of a substrate, the plurality of gate structures including a horizontal electrode extending in a first direction parallel with the top surface of the substrate; an isolation insulating material disposed between the gate structures; and a plurality of cell pillars penetrating the horizontal electrode to be spaced apart from each other, each of the cell pillars surrounded by the horizontal electrode, wherein a vertical thickness of the horizontal electrode is greater than a first spacing defined by a shortest horizontal distance between any two of the plurality of the cell pillars.