Semiconductor device and manufacturing method therefor

摘要

A wiring structure thereof includes a first interlayer insulating film, a first wiring and a first electrode for the capacitive element embedded in the first interlayer insulating film, a barrier insulating film formed over the first interlayer insulating film to cover the wiring and the electrode, a second interlayer insulating film formed over the barrier insulating film, and a second wiring and a second electrode for the capacitive element embedded in the second interlayer insulating film. The lower surface of the second wiring is positioned in the middle of the thickness of the second interlayer layer film, and the lower surface of the second electrode is in contact with the barrier insulating film. The barrier insulating film of a portion interposed between both electrodes functions as a capacitance insulating film of the capacitive element and is thicker than the barrier insulating film of a portion covering the first wiring.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a wiring structure formed over the semiconductor substrate and including a plurality of wiring layers; and a capacitive element formed in the wiring structure, the wiring structure including:
a first interlayer insulating film;a first wiring, and a first electrode for the capacitive element both being embedded in the first interlayer insulating film;a barrier insulating film formed over the first interlayer insulating film so as to cover the first wiring and the first electrode;a second interlayer insulating film formed over the barrier insulating film; anda second wiring, and a second electrode for the capacitive element both being embedded in the second interlayer insulating film, the second wiring having a lower surface positioned in the middle of a thickness of the second interlayer insulating film, the second electrode having a lower surface being in contact with the barrier insulating film, and the barrier insulating film of a portion interposed between the first electrode and the second electrode functioning as a capacitance insulating film of the capacitive element and being thicker than the barrier insulating film of a portion covering the first wiring.