Bonded processed semiconductor structures and carriers

摘要

Methods of fabricating semiconductor structures include implanting atom species into a carrier die or wafer to form a weakened region within the carrier die or wafer, and bonding the carrier die or wafer to a semiconductor structure. The semiconductor structure may be processed while using the carrier die or wafer to handle the semiconductor structure. The semiconductor structure may be bonded to another semiconductor structure, and the carrier die or wafer may be divided along the weakened region therein. Bonded semiconductor structures are fabricated using such methods.

主权项

1. A semiconductor structure, comprising:
at least one bonded semiconductor structure including two or more processed semiconductor structures that are attached together along a first direct bonded interface therebetween, the first direct bonded interface including direct metal-to-metal atomic bonds and direct dielectric-to-dielectric atomic bonds; and a temporary carrier die or wafer directly bonded to one processed semiconductor structure of the at least one bonded semiconductor structure along a second direct bonded interface therebetween, the second direct bonded interface comprising direct atomic or molecular bonds between at least one of silicon oxide and silicon nitride on a first side of the second direct bonded interface, and at least one of silicon, silicon oxide, and silicon nitride on a second side of the second direct bonded interface, the temporary carrier die or wafer having a weakened zone comprising a plurality of implanted ions therein at an average depth from a surface of the temporary carrier die or wafer bonded to the one processed semiconductor structure of the at least one bonded semiconductor structure.