IMAGE SENSOR AND METHOD OF FABRICATING AN IMAGE SENSOR
摘要
An image sensor includes a plurality of photodiodes disposed proximate to a frontside of a first semiconductor layer to accumulate image charge in response to light directed into the frontside of the first semiconductor layer. A plurality of pinning wells is disposed in the first semiconductor layer. The pinning wells separate individual photodiodes included in the plurality of photodiodes. A plurality of dielectric layers is disposed proximate to a backside of the first semiconductor layer. The dielectric layers are tuned such that light having a wavelength substantially equal to a first wavelength included in the light directed into the frontside of the first semiconductor layer is reflected from the dielectric layers back to a respective one of the plurality of photodiodes disposed proximate to the frontside of the first semiconductor layer.
申请公布号
HK1217817(A1)
申请公布日期
2017.01.20
申请号
HK20160105803
申请日期
2016.05.20
申请人
发明人
MAO, Duli;VENEZIA, Vincent;CHEN, Gang;YANG, Dajiang;TAI, Dyson H. H