| 发明名称 |
MEMORY DEVICE, MEMORY SYSTEM INCLUDING THE SAME AND OPERATION METHOD OF MEMORY DEVICE |
| 摘要 |
An operation method of a memory device includes: receiving a computation command; receiving a first address corresponding to the computation command; reading first data from a first memory location designated by the first address; receiving a second address corresponding to the computation command; reading second data from a second memory location designated by the second address; and performing a computation operation corresponding to the computation command on the first and second data. |
| 申请公布号 |
US2017017400(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201514983366 |
申请日期 |
2015.12.29 |
| 申请人 |
SK hynix Inc. |
发明人 |
KWON Yong-Kee;KIM Yong-Ju;KIM Hong-Sik |
| 分类号 |
G06F3/06 |
主分类号 |
G06F3/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An operation method of a memory device., the method comprising:
receiving a computation command; receiving a first address corresponding to the computation command; reading first data from a first memory location designated by the first address; receiving a second address corresponding to the computation to command; reading second data from a second memory location designated by the second address; and performing a computation operation corresponding to the computation command on the first and second data. |
| 地址 |
Gyeonggi-do KR |
