| 发明名称 |
METHOD FOR FORMING THIN FILM PATTERN |
| 摘要 |
The present disclosure provides a method for forming a thin film pattern. The method includes steps of: forming a mask pattern on a thin film in such a manner that the mask pattern includes a reserved portion corresponding to a region where the thin film pattern to be formed is located, and a partially-reserved portion neighboring the reserved portion; performing a wet-etching process to etch off a portion of the thin film which is not covered by the mask pattern; performing a dry etching process to remove the partially-reserved portion and thin the reserved portion; and performing a dry etching process to etch off a portion of the thin film which is not covered by the remaining mask pattern, so as to form the thin film pattern. |
| 申请公布号 |
US2017018581(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201615099409 |
申请日期 |
2016.04.14 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
XIAO Zhilian;ZHAO Haisheng;PEI Xiaoguang |
| 分类号 |
H01L27/12;H01L21/311;H01L21/3105;H01L21/02 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a thin film pattern comprising steps of:
forming a mask pattern on a thin film in such a manner that the mask pattern comprises a reserved portion corresponding to a region where the thin film pattern to be formed is located, and a partially-reserved portion neighboring the reserved portion; performing a wet-etching process to etch off a portion of the thin film which is not covered by the mask pattern; performing a dry etching process to remove the partially-reserved portion and thin the reserved portion; and performing a dry etching process to etch off a portion of the thin film which is not covered by the remaining mask pattern, so as to form the thin film pattern. |
| 地址 |
Beijing CN |
