| 发明名称 |
Photolithography Process and Materials |
| 摘要 |
One of the broader forms of the present disclosure relates to a method of making a semiconductor device. The method includes exposing a photoresist layer to a radiation source and applying a hardening agent to the photoresist layer. Therefore after applying the hardening agent a first portion of the photoresist layer has a higher glass transition temperature, higher mechanical strength, than a second portion of the photoresist layer. |
| 申请公布号 |
US2017017158(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201514802756 |
申请日期 |
2015.07.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Cheng Ya-Ling;Chang Ching-Yu;Wang Chien-Wei;Chen Yen-Hao |
| 分类号 |
G03F7/40;G03F7/38;G03F7/32;G03F7/20 |
主分类号 |
G03F7/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
exposing a photoresist layer to a radiation source; and applying a hardening agent to the photoresist layer, wherein after applying the hardening agent, a first portion of the photoresist layer has a higher glass transition temperature (Tg), or a higher mechanical strength, than a second portion of the photoresist layer. |
| 地址 |
Hsin-Chu TW |
