HETEROLEPTIC DIAZADIENYL GROUP 4 TRANSITION METAL-CONTAINING COMPOUNDS FOR VAPOR DEPOSITION OF GROUP 4 TRANSITION METAL-CONTAINING FILMS

摘要

Disclosed are Group 4 transition metal-containing thin film forming precursors. Also disclosed are vapor deposition methods using the disclosed precursors to deposit Group 4 transition metal-containing thin films on one or more substrates.

主权项

1. A Group 4 transition metal-containing thin film forming precursor having the following formula:wherein M is selected from a Group 4 transition metal consisting of Ti, Zr, or Hf and each R1, R2, R3, R4, R5, R6, R7, R8, R9, and R10 is independently selected from H; a C1-C5 linear, branched, or cyclic alkyl group; a C1-C5 linear, branched, or cyclic alkylsilyl group; a C1-C5 linear, branched, or cyclic alkylamino group; or a C1-C5 linear, branched, or cyclic fluoroalkyl group.