| 摘要 |
Provided are a TFT substrate structure and a manufacturing method therefor. The TFT substrate structure comprises an N-type light-doped A-Si layer (42) and an N-type heavily-doped A-Si layer (43) disposed between an A-Si layer (41) and a metal layer to form a doped concentration gradient, such that an energy barrier between the metal layer and the A-Si layer is lower, and electrons are more easily injected. Moreover, on the premise of no reduction of Ion, Ioff is reduced, and the electrical property of a TFT is improved. The manufacturing method for the TFT substrate structure comprises: forming an N-type light-doped A-Si layer and an N-type heavily-doped A-Si layer between an A-Si layer and a metal layer. |
