| 发明名称 |
MEMORY SYSTEM ARCHITECTURE INCLUDING SEMI-NETWORK TOPOLOGY WITH SHARED OUTPUT CHANNELS |
| 摘要 |
A memory system includes a first plurality of nonvolatile memory devices of a first channel of the memory system, the first plurality of memory devices each being connected to a first communications bus; a second plurality of nonvolatile memory devices of a second channel of the memory system, the second plurality of memory devices each being connected to a second communications bus, and a first interconnection between a first memory device and a second memory device, the first memory device being a memory device from among the first plurality of nonvolatile memory devices, the second memory device being a memory device from among the second plurality of nonvolatile memory devices. |
| 申请公布号 |
US2017017590(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201514801241 |
申请日期 |
2015.07.16 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
BERMAN Amit;BEITLER Uri;KONG Jun Jin |
| 分类号 |
G06F13/28;G06F3/06 |
主分类号 |
G06F13/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory system comprising:
a first plurality of nonvolatile memory devices of a first channel of the memory system, the first plurality of memory devices each being connected to a first communications bus; a second plurality of nonvolatile memory devices of a second channel of the memory system, the second plurality of memory devices each being connected to a second communications bus; and a first interconnection between a first memory device and a second memory device, the first memory device being a memory device from among the first plurality of nonvolatile memory devices, the second memory device being a memory device from among the second plurality of nonvolatile memory devices. |
| 地址 |
Suwon-si KR |
