| 摘要 |
Provided is a semiconductor device provided with a semiconductor substrate, gate trench parts formed on the surface of the semiconductor substrate, dummy trench parts formed on the surface of the semiconductor substrate, and a first surface-side electrode which is formed above the surface of the semiconductor substrate and contains a metal. The gate trench parts have a gate trench formed on the surface of the semiconductor substrate, a gate conductor part formed in the gate trench, and a gate insulation part which is formed in the gate trench above the gate conductor part and which insulates the gate conductor part and the first surface-side electrode from each other. The dummy trench parts have a dummy trench formed on the surface of the semiconductor substrate and a dummy conductor part formed in the dummy trench and coming into contact with the first surface-side electrode. |
