| 摘要 |
A thin-film transistor structure, comprising a substrate (10), a gate electrode (20), a gate insulating layer (30), a semiconductor oxide layer (40), a source/drain electrode layer (50), a passivation layer (60) and a transparent conductive layer (70) which are provided in sequence from bottom to top, wherein an etching barrier layer (80) is formed through etching at a region of the source/drain electrode layer corresponding to the top of the semiconductor oxide layer. A method for manufacturing a thin film transistor, comprising: deposing and photo-etching a gate electrode on a substrate; deposing a gate insulating layer on the gate electrode; deposing and photo-etching a semiconductor oxide layer on the gate insulating layer; deposing and photo-etching a source/drain electrode layer on the semiconductor oxide layer; forming an etching barrier layer through etching at a region of the source/drain electrode layer corresponding to the top of the semiconductor oxide layer; deposing a passivation layer above the source/drain electrode layer and the semiconductor oxide layer; and deposing a transparent conductive layer on the passivation layer. In this method, the etching barrier layer is not deposed separately; however, the etching barrier layer having a practical function is formed by etching the source/drain electrode layer, which protects the semiconductor oxide layer while optimizing a thin-film transistor structure. |
