| 发明名称 |
SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS |
| 摘要 |
A nanowire device includes a first component formed on a substrate and a second component disposed apart from the first component on the substrate. A nanowire is configured to connect the first component to the second component. An anchor pad is formed along a span of the nanowire and configured to support the nanowire along the span to prevent sagging. |
| 申请公布号 |
US2017018508(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201514798007 |
申请日期 |
2015.07.13 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Balakrishnan Karthik;Lauer Isaac;Yamashita Tenko;Sleight Jeffrey W. |
| 分类号 |
H01L23/00;H01L29/66;H01L29/786;H01L29/06;H01L29/775;H01L29/423 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nanowire device, comprising:
a first component formed on a substrate; a second component disposed apart from the first component on the substrate; at least one nanowire configured to connect the first component to the second component; and a plurality of anchor pads formed along a span of the at least one nanowire and configured to support the at least one nanowire along the span to prevent sagging, wherein the plurality of anchor pads are separated by a distance of between about 50 nm to about 300 nm. |
| 地址 |
Armonk NY US |
