| 摘要 |
The present invention realizes a highly integrated high-capacity magnetic memory through miniaturization. The present invention can provide: a magnetoresistive element; and a magnetic memory using the magnetoresistive element, wherein the magnetoresistive element is provided with a first magnetic layer (25) having a magnetization direction perpendicular to a film surface, a first non-magnetic layer (13) disposed adjacent to one side of the first magnetic layer (25), and a second magnetic layer (12) which is disposed adjacent to the other side of the first magnetic layer (25) opposed to the first non-magnetic layer (13) and has a magnetization direction perpendicular to the film surface. The first magnetic layer (25) includes at least one 3d ferromagnetic transition metal element such as Co, Fe, Ni and Mn, and has the function of increasing the interfacial magnetic anisotropy energy density (Ki) at the interface between the first magnetic layer (25) and the first non-magnetic layer (13), and the second magnetic layer (12) includes at least one 3d ferromagnetic transition metal element such as Co, Fe, Ni and Mn, and has a saturation magnetization lower than the saturation magnetization (Ms) of the first magnetic layer (25). |
