THROUGH-SILICON VIA BASED SEMICONDUCTOR PACKAGE

摘要

Provided is a semiconductor package. The semiconductor package comprises: a device substrate having a device pattern formed thereon; a cap substrate overlying the device substrate and comprising a first cavity area; a base substrate underlying the device substrate and comprising a second cavity area formed in the position corresponding to the first cavity area and at least one first through-silicon via that outputs, to the outside, an electrical signal provided from the device pattern or transmits, to the device pattern, an electrical signal provided from the outside; and a circuit board underlying the base substrate and electrically connected with the first through-silicon via to process an electrical signal for the device pattern.