SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

According to an embodiment, a semiconductor memory device includes a plurality of control gate electrodes, a semiconductor layer, and a charge accumulation layer. The plurality of control gate electrodes are provided as a stack above a substrate. The semiconductor layer has as its longitudinal direction a direction crossing the substrate, and faces the plurality of control gate electrodes. The charge accumulation layer is positioned between the control gate electrode and the semiconductor layer. A gap is provided between the semiconductor layer and a lower end portion of the charge accumulation layer.

主权项

1. A semiconductor memory device, comprising:
a plurality of control gate electrodes provided as a stack above a substrate; a semiconductor layer having as its longitudinal direction a direction crossing the substrate, the semiconductor layer facing the plurality of control gate electrodes; and a charge accumulation layer positioned between the control gate electrode and the semiconductor layer, a gap being provided between the semiconductor layer and a lower end portion of the charge accumulation layer.