SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

According to an embodiment, a semiconductor memory device comprises a plurality of control gate electrodes, a semiconductor layer, and a first insulating layer. The plurality of control gate electrodes are stacked above a substrate. The semiconductor layer has as its longitudinal direction a direction perpendicular to the substrate, and faces the plurality of control gate electrodes. The first insulating layer is positioned between the semiconductor layer and the control gate electrode. In addition, part of the first insulating layer is a charge accumulation layer. Moreover, part of the first insulating layer is an oxide layer positioned upwardly of the charge accumulation layer.

主权项

1. A semiconductor memory device, comprising:
a plurality of control gate electrodes stacked above a substrate; a semiconductor layer having as its longitudinal direction a direction perpendicular to the substrate, the semiconductor layer facing the plurality of control gate electrodes; and a first insulating layer positioned between the semiconductor layer and the control gate electrode, part of the first insulating layer being a charge accumulation layer, and part of the first insulating layer being an oxide layer positioned upwardly of the charge accumulation layer.