SEMICONDUCTOR DEVICE

摘要

The semiconductor device includes a semiconductor element, and an electro-conductive first plate-like part electrically connected to a top-face-side electrode of the semiconductor element and including a first joint part projecting from a side face, and an electro-conductive second plate-like part including a second joint part projecting from a side face. A bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material. A bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.

主权项

1. A semiconductor device comprising:
a semiconductor element; a first plate-like part that is made of an electric conductor, is electrically connected to an top-face-side electrode of the semiconductor element, and includes a first joint part that projects from a side face of the first plate-like part; and a second plate-like part that is made of an electric conductor, and includes a second joint part that projects from a side face of the second plate-like part, wherein a bottom face of the first joint part and a top face of the second joint part face one another, and are electrically connected via an electro-conductive bonding material, and a bonding-material-thickness ensuring means is provided in a zone where the bottom face of the first joint part and the top face of the second joint part face one another to ensure a thickness of the electro-conductive bonding material between an upper portion of a front end of the second joint part and the bottom face of the first joint part.