METHOD OF SELECTIVE EPITAXY

摘要

Embodiments of the present disclosure generally relate to methods for trench filling of high quality epitaxial silicon-containing material without losing selectivity of growth to dielectrics such as silicon oxides and silicon nitrides. The methods include epitaxially growing a silicon-containing material within a trench formed in a dielectric layer by exposing the trench to a gas mixture comprising a halogenated silicon compound and a halogenated germanium compound. In one embodiment, the halogenated silicon compound includes chlorinated silane and halogenated germanium compound includes chlorinated germane.

主权项

1. A method of processing a substrate, comprising:
epitaxially growing a silicon-containing material within a trench formed in a dielectric layer by exposing the trench to a gas mixture comprising a halogenated silicon compound and a halogenated germanium compound, wherein the trench has a sidewall, and the sidewall comprises an oxide and a nitride.