| 发明名称 |
PRESSURE SENSOR WITH BUILT IN STRESS BUFFER |
| 摘要 |
A semiconductor pressure sensor comprising: a semiconductor substrate having a through-opening extending from a top surface to a bottom surface of the substrate, the through-opening forming a space between an inner part and an outer part of said substrate; a pressure responsive structure arranged on said inner part; a number of flexible elements extending from said inner part to said outer part for suspending the inner part within said through-opening; the through-opening being at least partly filled with an anelastic material. A method of producing such a semiconductor pressure sensor. |
| 申请公布号 |
US2017016790(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201615184139 |
申请日期 |
2016.06.16 |
| 申请人 |
Melexis Technologies NV |
发明人 |
VAN DER WIEL Appolonius Jacobus |
| 分类号 |
G01L19/06;G01L19/04;G01L9/00 |
主分类号 |
G01L19/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor pressure sensor for measuring a pressure, comprising:
a semiconductor substrate having a through-opening extending from a top surface to a bottom surface of the substrate, the through-opening forming a hollow space between an inner part and an outer part of said substrate; a pressure responsive structure arranged on said inner part; a number of flexible elements extending from said inner part to said outer part for suspending the inner part within said through-opening; the through-opening being at least partly filled with an anelastic material. |
| 地址 |
Tessenderlo BE |
