| 摘要 |
The present disclosure pertains to a solid-state image pickup device, a manufacturing method, and electronic equipment, which are capable of suppressing surface roughening of the surface of wiring. In a re-wiring formation process, after a through-hole is opened, a Ti/Cu film which is a seed layer and a barrier layer is formed through Ti/Cu sputtering. At this moment, in reality, processes for degas heating, reverse sputtering, Ti deposition, and seed-Cu deposition are sequentially performed. When depositing a seed-Cu film, as a method for depositing a seed-Cu film having high crystallinity, one method is to perform the depositing after raising the substrate temperature. By performing the deposition at a substrate temperature not lower than 60 degrees, a seed-Cu film of Cu (111)/(200) is formed, and Cu-clouding is suppressed. The present disclosure can be applied to a CMOS solid-state image pickup device used in an image pickup apparatus such as a camera, for example. |
