MANUFACTURING METHOD OF LED EPITAXIAL STRUCTURE

摘要

The present invention provides a manufacturing method of an LED epitaxial structure. The method comprises: in-situ forming, via an epitaxy process, a recess, and then filling the recess with a current barrier dielectric layer, thus forming a current-spreading layer. The present invention has a current-spreading effect, thus improving the uniformity of an electron or hole current, increasing the illuminance of emitted light, and lowering the working voltage.