发明名称 INSULATED GATE BIPOLAR TRANSISTOR (IGBT) DRIVE CIRCUIT
摘要 The present disclosure provides an IGBT drive circuit, comprising an optical coupler chip and a power amplification circuit. The optical coupler chip comprises an isolation amplification unit and a fault protection unit. The fault protection unit comprises a desaturation module and a fault feedback module. The desaturation module is used to send an alarm signal to the fault feedback module if it is detected that an electric potential of a collector in an IGBT is too high or the electric potential of the collector in the IGBT changes too rapidly. The fault feedback module is used to send a fault control signal to an external controller after receiving the alarm signal, thereby controlling an external drive signal outputted by the external controller, so that the isolation amplification unit outputs an IGBT drive signal to control a turn-off of the IGBT.
申请公布号 WO2017008441(A1) 申请公布日期 2017.01.19
申请号 WO2015CN98214 申请日期 2015.12.22
申请人 BOE TECHNOLOGY GROUP CO., LTD.;BEIJING BOE ENERGY TECHNOLOGY CO., LTD. 发明人 WANG, Qingmeng;HAN, Xiaoyan
分类号 H03K17/78 主分类号 H03K17/78
代理机构 代理人
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