| 摘要 |
The present invention provides a composition for forming a resist underlayer film, containing an organic solvent and either or both of a compound shown by the following general formula (1) and a condensate of the compound. There can be provided a composition for forming a resist underlayer film that is capable of forming an underlayer film, especially for use in a three-layer resist process, that can reduce reflectance, has high pattern-bend resistance, and prevents line fall and wiggling after etching of a high aspect line especially thinner than 60 nm, and a patterning process using the same.; |
| 主权项 |
1. A composition for forming a resist underlayer film, comprising an organic solvent and either or both of a compound shown by the following general formula (1) and a condensate of the compound,wherein R1, R3, R5, and R7 represent Z1, a diglycidylamino group, or a dipropargylamino group; R2, R4, R6, and R8 represent Z2, a glycidyl group, a diglycidylamino group, or a dipropargylamino group; X represents a group shown by the following formula (1-1); n1 to n8 are each a number satisfying 0≦n1≦4, 0≦n2≦4, 0≦n3≦4, 0≦n4≦4, 0≦n5≦4, 0≦n6≦4, 0≦n7≦4, 0≦n8≦4, 0≦n1+n2≦4, 0≦n3+n4≦4, 0≦n5+n6≦4, 0≦n7+n8≦4, and 1≦n1+n2+n3+n4+n5+n6+n7+n8≦16, where Z1 represents an alkyl group having 1 to 20 carbon atoms, an alkenyl group or alkynyl group having 2 to 20 carbon atoms, or an aryl group having 6 to 30 carbon atoms, and Z2 represents Z1, a hydrogen atom, or a hydroxyaryl group having 6 to 14 carbon atoms,wherein * represents a binding site with Rp where p represents 2, 4, 6, or 8. |
