RF ATTENUATOR DEVICE AND SYSTEM

摘要

A device includes a thermally conductive and electrically insulative substrate having a first major surface and a second major surface. A coupling structure is configured to reduce the RF input signal by substantially a predetermined amount of attenuation power. A tuning circuit is characterized by a tuning reactance substantially matched to a predetermined system impedance. A resistor is disposed on a majority of the first major surface and is characterized by a parasitic capacitance that is substantially negated by the tuning reactance. The resistor includes a first resistive portion and a second resistive portion; each of the first resistive portion and the second resistive portion being configured to direct approximately one-half of the attenuation power to the ground portion.

主权项

1. An RF attenuator device comprising:
an RF input port and an RF output port; a substrate having a first major surface and a second major surface, the substrate being thermally conductive and electrically insulative, the substrate including a ground portion disposed on at least the second major surface; a coupling structure disposed on the substrate, the RF input port being configured to direct an RF input signal to the coupling structure, the coupling structure being configured to couple a predetermined coupled portion of the RF input signal within a predetermined frequency band to provide an RF output signal to the RF output port; a resistor disposed on at least a majority of the first major surface and coupled between the tuning circuit and the ground portion, the resistor being configured to substantially direct an uncoupled portion of the RF input signal to the ground portion; and a connective circuit coupled between the coupling structure and the resistor, the connective circuit being configured to substantially direct the attenuation power to the resistor.