| 发明名称 |
Semiconductor Device with Multiple Carrier Channels |
| 摘要 |
A semiconductor device includes a layered structure forming multiple carrier channels including at least one n-type channel formed in a first layer made of a first material and at least one p-type channel formed in a second layer made of a second material and a set of electrodes for providing and controlling carrier charge in the carrier channels. The first material is different than the second material, and the first and the second materials are selected such that the n-type channel and the p-type channel have comparable switching frequency and current capability. |
| 申请公布号 |
US2017018639(A1) |
申请公布日期 |
2017.01.19 |
| 申请号 |
US201514842856 |
申请日期 |
2015.09.02 |
| 申请人 |
Mitsubishi Electric Research Laboratories, Inc. |
发明人 |
Teo Koon Hoo;Zhang Yuhao |
| 分类号 |
H01L29/778;H01L29/205;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a layered structure forming multiple carrier channels including at least one n-type channel formed in a first layer made of a first material and at least one p-type channel formed in a second layer made of a second material, wherein the first material is different than the second material, and wherein the first and the second materials are selected such that the n-type channel and the p-type channel have comparable switching frequency and current capability; and a set of electrodes for providing and controlling carrier charge in the carrier channels. |
| 地址 |
Cambridge MA US |
