| 摘要 |
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body provided on the substrate and including multiple electrode layers separately stacked with each other, a semiconductor film, a charge storage film provided between the semiconductor film and the multiple electrode layers, and a first insulating film provided between the semiconductor film and the charge storage film, extending in the stacking direction, and having a bottom surface contacting the substrate. The semiconductor film is provided integrally with the substrate in the stacked body, and extends in a stacking direction of the stacked body. An orientation of a crystal structure of the semiconductor film is equal to an orientation of a crystal structure of the substrate. |
