SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor memory device includes a stacked body including a plurality of electrode films and a plurality of insulating films, the plurality of electrode films and the plurality of insulating films being alternately stacked on each other, a semiconductor pillar extending in a stacking direction of the stacked body, and a charge storage film provided between the electrode films and the semiconductor pillar and extending linearly in the stacking direction of the stacked body. A stacking-direction width of an edge portion of the electrode films on side of the semiconductor pillar is shorter than a stacking-direction width of the electrode films other than the edge portion of the electrode films.

主权项

1. A semiconductor memory device comprising:
a stacked body including a plurality of electrode films and a plurality of insulating films, the plurality of electrode films and the plurality of insulating films being alternately stacked on each other; a semiconductor pillar extending in a stacking direction of the stacked body; and a charge storage film provided between the electrode films and the semiconductor pillar and extending linearly in the stacking direction of the stacked body, a stacking-direction width of an edge portion of the electrode films on side of the semiconductor pillar being shorter than a stacking-direction width of the electrode films other than the edge portion of the electrode films.