SEMICONDUCTOR DEVICE

摘要

The present disclosure provides a technique for improving the reliability of a semiconductor device where spreading of cracking that occurs at the time of dicing to a seal ring can be restricted even in a semiconductor device with a low-k film used as an interlayer insulating film. Vias are formed in each layer on a dicing region side. The vias are formed at the same intervals in a matrix as viewed in a top view. Even in the case where cracking occurs at the time of dicing, the cracking can be prevented from spreading to a seal ring by the vias. As a result, resistance to moisture absorbed in a circuit formation region can be improved, and deterioration in reliability can be prevented.

主权项

1. A semiconductor device having a first region, a second region and a third region, and the first region, the second region and the third region are arranged toward the inside from the outside in this order, a circuit formation region is arranged in the third region and a seal ring is arranged in the second region in a plan view, comprising:
a silicon substrate; a first interlayer insulating film formed over the silicon substrate; a first interconnecting layer and a first slit via each formed within the first interlayer insulating film; and a first single metal and a plurality of first vias formed in the first interlayer insulating film, and disposed in the first region, wherein the first interconnecting layer and the first slit via form the seal ring, wherein the plurality of first vias are disposed under the first single metal, and wherein the plurality of first vias are connected to the first single metal.