发明名称 INTERPOSERS, SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURING INTERPOSERS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
摘要 An interposer which can better prevent detachment of a conductive layer pattern due to thermal expansion and thermal contraction. The interposer includes a substrate having a through hole; an insulative resin layer formed on a surface of the substrate and including a conductive via; a wiring layer disposed on the substrate with the insulative resin layer interposed therebetween; an inorganic adhesive layer formed only on a side surface of the through hole; and a through electrode filled in a connection hole which is formed by the inorganic adhesive layer in the through hole so as to penetrate between both surfaces of the substrate, wherein the through electrode is electrically connected to the wiring layer via the conductive via, and a thermal expansion coefficient of the inorganic adhesive layer is larger than a thermal expansion coefficient of the substrate and smaller than a thermal expansion coefficient of the through electrode.
申请公布号 US2017018492(A1) 申请公布日期 2017.01.19
申请号 US201615278900 申请日期 2016.09.28
申请人 TOPPAN PRINTING CO., LTD. 发明人 IMAYOSHI Koji;KIUCHI Syuji
分类号 H01L23/498;H01L21/48 主分类号 H01L23/498
代理机构 代理人
主权项 1. An interposer comprising: a substrate having a through hole; at least one insulative resin layer formed on a surface of the substrate and including a conductive via; at least one wiring layer disposed on the substrate with the insulative resin layer interposed therebetween; an inorganic adhesive layer formed only on a side surface of the through hole; and a through electrode filled in a connection hole which is formed by the inorganic adhesive layer in the through hole so as to establish electrical connection between both surfaces of the substrate, wherein the through electrode is electrically connected to the wiring layer via the conductive via, and a thermal expansion coefficient of the inorganic adhesive layer is larger than a thermal expansion coefficient of the substrate and smaller than a thermal expansion coefficient of the through electrode.
地址 Tokyo JP