SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE

摘要

The present disclosure pertains to: a solid-state imaging element, which allows a trench structure surrounding each pixel region of the solid-state imaging element and a through-electrode to be efficiently installed in parallel; a manufacturing method; and an electronic device. A solid-state imaging element according to a first aspect of the present disclosure is provided with: a photoelectric conversion unit formed for each pixel region in a semiconductor substrate; a trench structure comprising wall surfaces of an insulating film which are formed in the depth direction of the semiconductor substrate, and surrounding each pixel region; and a through-electrode passing through the semiconductor substrate and formed at a position overlapping the trench structure. The present disclosure can be applied, for example, to a backside-illuminated CMOS image sensor.