发明名称 |
Bump Structures for Multi-Chip Packaging |
摘要 |
A multi-chip package includes a substrate having a plurality of first bump structures. A pitch between first bump structures of the plurality of first bump structures is uniform across a surface of the substrate. The multi-chip package includes a first chip bonded to the substrate and a second chip bonded to the substrate. The first chip includes a plurality of second bump structures, and the plurality of second bump structures are bonded to a first set of first bump structures of the plurality of first bump structures. The second chip includes a plurality of third bump structures, and the plurality of third bump structures are bonded to a second set of first bump structures of the plurality of first bump structures. A pitch between second bump structures of the plurality of second bump structures is different from a pitch between third bump structures of the plurality of third bump structures. |
申请公布号 |
US2017018523(A1) |
申请公布日期 |
2017.01.19 |
申请号 |
US201615263162 |
申请日期 |
2016.09.12 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Yu Chen-Hua;Lin Jing-Cheng |
分类号 |
H01L23/00;H01L25/065;H01L23/498;H01L25/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming a multi-chip package, the method comprising:
bonding a first chip to a substrate, wherein the substrate has a plurality of first bump structures, wherein the first chip comprises a plurality of second bump structures, and bonding the first chip to the substrate comprises covering at least two first bump structures of the plurality of first bump structures with a second bump structure of the plurality of second bump structures, each of the plurality of first bump structures being coupled to different contact pads; and bonding a second chip to the substrate, wherein the second chip comprises a plurality of third bump structures, and bonding the second chip to the substrate comprises bonding the plurality of third bump structures to corresponding ones of a set of first bump structures of the plurality of first bump structures. |
地址 |
Hsin-Chu TW |