发明名称 METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR
摘要 A method of manufacturing a solid-state image sensor, the method comprising preparing a structure including a substrate and an insulating member provided thereon, the substrate including a photoelectric conversion portion, forming a first opening in the insulating member, the first opening having a bottom face at a position higher than an upper face of the substrate and an inclined first face, forming a first member to fill the first opening, forming a second opening in the first member, forming a third opening, having a second face, in the insulating member by etching part of the insulating member under the second opening using the first member, and forming a second member to fill the third opening, wherein the inclined angle of the first face is smaller than that of the second face.
申请公布号 US2017018596(A1) 申请公布日期 2017.01.19
申请号 US201615200349 申请日期 2016.07.01
申请人 CANON KABUSHIKI KAISHA 发明人 Kitamura Shingo
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A method of manufacturing a solid-state image sensor, the method comprising: preparing a substrate which includes a photoelectric conversion portion, and an insulating member which is provided on the substrate; forming, above the photoelectric conversion portion, a first opening in the insulating member, the first opening having a bottom face apart from an upper face of the substrate and having a first side face inclined to the upper face of the substrate; forming a first member so as to fill the first opening; forming, above the photoelectric conversion portion, a second opening in the first member; forming, above the photoelectric conversion portion, a third opening in the insulating member by etching a portion of the insulating member between the second opening and the photoelectric conversion portion by using the first member having the second opening as a mask, the third opening having a second side face; and forming a second member so as to fill the third opening, wherein an angle formed by the first side face and the upper face of the substrate is smaller than an angle formed by the second side face and the upper face of the substrate.
地址 Tokyo JP