发明名称 MASK WITH MULTILAYER STRUCTURE AND MANUFACTURING METHOD BY USING THE SAME
摘要 The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A multilayer (ML) structure is disposed over the substrate. The ML structure is configured to reflect radiation. The ML structure contains a plurality of interleaving film pairs. Each film pair includes a first film and a second film. The first film and the second film have different material compositions. Each film pair has a respective thickness. For at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction.
申请公布号 US2017017147(A1) 申请公布日期 2017.01.19
申请号 US201514801914 申请日期 2015.07.17
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Shih Chih-Tsung;Chen Jeng-Horng;Yu Shinn-Sheng;Yen Anthony
分类号 G03F1/22;G03F7/20 主分类号 G03F1/22
代理机构 代理人
主权项 1. A photolithography mask, comprising: a substrate that contains a low thermal expansion material (LTEM); and a multilayer (ML) structure disposed over the substrate, the ML structure being configured to reflect radiation, wherein: the ML structure contains a plurality of interleaving film pairs; each film pair includes a first film and a second film, the first film and the second film having different material compositions; each film pair has a respective thickness; and for at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction.
地址 Hsin-Chu TW