发明名称 |
MASK WITH MULTILAYER STRUCTURE AND MANUFACTURING METHOD BY USING THE SAME |
摘要 |
The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A multilayer (ML) structure is disposed over the substrate. The ML structure is configured to reflect radiation. The ML structure contains a plurality of interleaving film pairs. Each film pair includes a first film and a second film. The first film and the second film have different material compositions. Each film pair has a respective thickness. For at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction. |
申请公布号 |
US2017017147(A1) |
申请公布日期 |
2017.01.19 |
申请号 |
US201514801914 |
申请日期 |
2015.07.17 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Shih Chih-Tsung;Chen Jeng-Horng;Yu Shinn-Sheng;Yen Anthony |
分类号 |
G03F1/22;G03F7/20 |
主分类号 |
G03F1/22 |
代理机构 |
|
代理人 |
|
主权项 |
1. A photolithography mask, comprising:
a substrate that contains a low thermal expansion material (LTEM); and a multilayer (ML) structure disposed over the substrate, the ML structure being configured to reflect radiation, wherein: the ML structure contains a plurality of interleaving film pairs; each film pair includes a first film and a second film, the first film and the second film having different material compositions; each film pair has a respective thickness; and for at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction. |
地址 |
Hsin-Chu TW |