发明名称 |
EPITAXIAL SILICON CARBIDE SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PRODUCING THE SAME |
摘要 |
Provided is an epitaxial silicon carbide single-crystal substrate in which a silicon carbide epitaxial film having excellent in-plane uniformity of doping density is disposed on a silicon carbide single-crystal substrate having an off angle that is between 1° to 6°. The epitaxial film is grown by repeating a dope layer that is 0.5 µm or less and a non-dope layer that is 0.1 µm or less. The dope layer is formed with the ratio of the number of carbon atoms to the number of silicon atoms (C/Si ratio) in a material gas being 1.5 to 2.0, and the non-dope layer is formed with the C/Si ratio being 0.5 or more but less than 1.5. The resulting epitaxial silicon carbide single-crystal substrate comprises a high-quality silicon carbide epitaxial film, which has excellent in-plane uniformity of doping density, on a silicon carbide single-crystal substrate having a small off angle. |
申请公布号 |
EP2570522(B1) |
申请公布日期 |
2017.01.18 |
申请号 |
EP20110780725 |
申请日期 |
2011.05.10 |
申请人 |
Nippon Steel & Sumitomo Metal Corporation |
发明人 |
AIGO, Takashi;TSUGE, Hiroshi;HOSHINO, Taizo;FUJIMOTO, Tatsuo;KATSUNO, Masakazu;NAKABAYASHI, Masashi;YASHIRO, Hirokatsu |
分类号 |
C30B29/36;C23C16/42;C30B25/02;C30B25/18;C30B25/20;H01L21/02;H01L21/205 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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