发明名称 有機半導体膜、その製造方法及びトランジスタ構造
摘要 Provided is an organic semiconductor film with which a desired band gap can be securely achieved. In an ultrahigh vacuum film formation device (10), 5,5′,5″,5′″,5″″,5′″″-hexabromocyclohexa-m-phenylene (CHP) powder is made to sublimate from a fuel cell (12) by the application of heat energy, bromine is made to separate out by causing the CHP molecules to collide with a catalyst metal layer (M) of a substrate (G), and a plurality of generated phenyl radicals are made to mutually bond through Ullmann reactions, thereby forming a two-dimensional network structure of carbon atoms.
申请公布号 JP6062321(B2) 申请公布日期 2017.01.18
申请号 JP20130116758 申请日期 2013.06.03
申请人 東京エレクトロン株式会社 发明人 加賀谷 宗仁;松本 貴士;加藤 大輝
分类号 H01L51/30;C07C2/64;C08G61/10;H01L29/786;H01L51/05;H01L51/40 主分类号 H01L51/30
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