| 摘要 |
A photoelectric conversion element includes an optically transparent support, a porous semiconductor layer containing a photosensitizer, a conductive layer, and a counter electrode provided in that order, each of the porous semiconductor layer and the conductive layer containing an electrolytic solution. The photoelectric conversion element has an interfacial resistance Rs of 0.6 &OHgr;·cm2 or less, the interfacial resistance Rs being measured by an alternating current impedance method. |
