| 摘要 |
An etching liquid for processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing at least one metal selected from transition metals belonging to group 3 to group 11 of the periodic table thereby removing the first layer selectively, wherein the etching liquid contains a hexafluorosilicic acid compound, and an oxidizing agent of which concentration is 0.05% by mass or more and less than 10% by mass. |
